中文摘要：

将Sc2O3替代层引入到532nm高反膜（HfO2／SiO2）”中，利用Sc2O3在盐酸中具有较好的溶解性这个特点，把膜层与基片脱离，以方便基片返修，缩短返修周期，降低成本。能量色散谱元素测试表明，脱离后Sc元素残留率为0。用Lamada900分光光度计、WykoNT1100轮廓仪和ZYGO干涉仪分别表征了替代层引入对高反膜的光谱、表面粗糙度和应力的影响，并测试了膜系在532nm的激光损伤阈值的变化，结果表明Sc2O3替代层的引入对高反膜的性能几乎没有负面影响。

英文摘要：

Sc2O3 substitution layer is introduced to 532 nm high reflector（HR） of HfO2/SiO2. According to its solution in hydrochloric acid, when failure occurs, putting the optics into acid, following by the solution of Sc2O3 substitution layer, the whole films are romoved clearly, then the substrates can be repolished simply and reused, time and cost can be saved greatly, too. 0% of Sc is detected by energy diffraction spectrum after acid soaking on BK7 suhstrates. Lamada900 speetrophotometer, optical interferometer and WykoNT1100 contourgraph are employed to characterize the transmittance, stress and surface morphology of the 532 nm HR films, and the laser induced damage thresholds of the films with 532 nm laser beam are measured before and after replacement by Sc2O3. It shows that the influence is＇negligible. Scanning electron microscopy is employed to represent the damage morphology. The substrates on which films are swept are recoated with the same films, series characterization of the recoated films proves that they are excellent and can be used in the laser system.