中文摘要：

以非晶硅薄膜为核心的薄膜晶体管技术目前已经相当成熟,在该技术投入使用并且得以很好地优化之后,要想进一步提高薄膜晶体管的性能,就有必要开发新型的薄膜材料.近年来,由半导体纳米晶体构成的新型薄膜材料在晶体管中的应用越来越受到人们关注.利用半导体纳米晶体制备的薄膜晶体管有着较高的载流子迁移率和开关电流比,同时在其制备过程中可以在较低温度下大面积成膜,能够使用塑料等柔性衬底,因而具有明显的成本优势,发展前景广阔.着重介绍了几种颇具潜力的半导体（如硒化镉、碲化汞、硒化铅、锗、硅）纳米晶体在制备薄膜晶体管方面的应用.

英文摘要：

Thin-film transistors （TFTs） are fabricated mainly by using amorphous silicon （a-Si） films.The quest for TFTs with improved performance has led to the extensive study on novel thin-film materials.In recent years semiconductor nanocrystals （NCs） have attracted great attention because of their potential in the preparation of thin films for TFTs.The carrier mobility and Ion/Ioff ratio of TFTs based on semiconductor NCs may be high.It is possible that large-area semiconductor-NC thin films can be obtained at the top of flexible substrates at low temperature,giving rise to the low cost of the manufacturing of TFTs.The exciting progress of TFTs based on typical semiconductor NCs such as Cdse,HgTe,Pbse,PbTe,Ge and Si NCs are introduced.