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中文摘要：
通过射频磁控溅射技术在Si（111）衬底上制备了未掺杂ZnO薄膜和Nd掺杂ZnO薄膜。应用XRD分析了ZnO：Nd薄膜的晶格结构，通过AFM观察了ZnO：Nd薄膜的表面形貌。结果表明，Nd掺入了ZnO晶格中，由于Nd原子半径大于Zn原子半径，Nd以替位原子的形式存在于ZnO晶格中。ZnO：Nd薄膜为纳米多晶薄膜，表面形貌粗糙。ZnO：Nd薄膜的室温光致发光谱表明，相同条件下制备的未掺杂ZnO薄膜和Nd掺杂ZnO薄膜都出现了395nm的强紫光带和495nm的弱绿光带。我们认为，紫光发射峰窄而锐且强度远大于绿光峰，源于薄膜中激子复合；绿光峰强度较弱，源于薄膜中的氧空位（V0）及氧反位锌缺陷（OZn）。Nd掺杂没有影响ZnO：Nd薄膜的PL谱的发射峰的峰位。由于Nd^3＋离子电荷数与Zn^2＋离子电荷数不相等，为了保持ZnO薄膜的电中性，间隙锌（VZn）可以作为Nd替位补偿性的受主杂质而存在，影响ZnO薄膜的激子浓度。同时，Nd掺入使ZnO的晶格畸变缺陷浓度改变增强，因而发射峰的强度随Nd掺杂浓度不同而变化。
英文摘要：
The undoped ZnO and Nd-doped ZnO thin films were deposited on Si （ 111 ） substrate by radio frequencymagnetron sputtering. The lattice structure and the surface morphology were analyzed by X-ray diffraction and atomic force microscope, respectively. The results indicate that owing to the lager radius of Nd atoms than Zn atoms the Nd were substitution atoms in the ZnO lattices. The Nd-doped ZnO thin films were nano-multi-crystal and the surface morphology were roughness since the deformation of Nd-doped ZnO lattices. The room temperature photoluminescence spectrum indicates that undoped ZnO thin films and Nd-doped ZnO thin films have strong purple band at 395 nm and weak green band at 495 nm. Because of the exciton recombination the purple peaks are narrower and stronger than that of the green peak. The weak green peaks come from the oxygen vacancy and the oxygen antisite of Zn defects in the films. We also found that the Nd-dopd has no effect on the emission peak position of the PL spectrum. Due to the charges number of the Nd^3＋ ions are not equals to the Zn^2＋ ions, in order to keep the charge neutral of ZnO, the interstitial Zn atoms must exist as compensation acceptor impurity which comes from the substitution of Zn atoms in ZnO by Nd, meanwhile the density of exciton were also changed. Besides the luminosity of luminous peaks were also changed by the lattice deformation and the density change of ZnO.
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