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Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temp
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  • 相关项目：适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
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适用于65nm技术代以后的CMOS器件栅工程和沟道工程关键技术研究
期刊论文 36 会议论文 5
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