采用中频感应熔炼方法制备Ni-5at%W合金锭,经锻造和热轧后,再冷轧到50m长,厚度为60μm的带材。随后在800~1200℃进行再结晶退火处理。在兼顾“高织构”和“浅晶界”要求下,得出1100℃,0.5h是Ni5W合金基带最佳的退火工艺。根据X射线衍射(XRD)和电子背散射衍射技术(EBSD)结果,在1100℃/0.5h时该Ni5W合金基带的再结晶立方织构含量达到98.9%(≤10°),且晶粒尺寸均匀。退火后的Ni5W合金基带扫描半高宽(FWHM)值和孪晶界含量接近德国Dresden公司商业化Ni5W合金基带的水平。
A Ni-5at%W ingot was prepared by medium frequency induction melting. The ingot was forged, hot-rolled and cold-rolled into trips with 60 μm thickness and 50 m length. Recrystallization annealing for the substrate trip was carried out at different temperatures (800-1200 ℃) for different time. Taking account of high cube texture and shallow boundary, the recrystallization annealing of 1100 ℃/0.5 h is regarded as the best. According to X-ray diffraction and EBSD analyses, the cube grain content of the tape annealed at 1100 ℃ for 0.5 h reaches as high as 98.9% (tolerance angle of less than 10°), and grain size is uniform. The FWHM values of the in-plane and the content of crystal twin are slightly different from that of the commercial Ni5W tape supplied by Germany Dresden.