中文摘要：

介绍了一种新型沟道非均匀掺杂的双栅无结金属氧化物半导体场效应晶体管（MOSFET）。采用Sentaurus TCAD仿真软件对不同沟道掺杂浓度（NSC）的沟道非均匀掺杂双栅无结MOSFET和传统双栅无结MOSFET进行了电特性与单粒子辐射效应对比研究,并分析了不同源端沟道掺杂与源端沟道长度（LSC）下新型双栅无结MOSFET的单粒子辐射特性。仿真结果表明,新型双栅无结MOSFET的电学特性与传统双栅无结MOSFET相差不大,但在抗单粒子辐射方面具有优良的性能,在受到单粒子辐射时,可有效降低沟道内电子-空穴对的产生概率,漏极电流与收集电荷都低于传统无结器件,同时还可以降低寄生三极管效应对器件的影响。

英文摘要：

The novel double-gate junctionless MOSFETs with a non-uniformly doped channel were described. Electrical properties and single event effect of the double-gate junctionless MOSFETs with non-uniformly doped channel of different doping levels were compared with that of the conventional double-gate junctionless MOSFETs by using the Sentaurus TCAD software. And single event radiation properties of the novel MOSFETs with different doping levels in the channel near source（ NSC） and of different channel length（ LSC） were analyzed. Simulation results show that the electrical properties of the novel double-gate junctionless MOSFETs do not differ much from that of the conventional double-gate junctionless MOSFETs, but the novel MOSFETs have better performances in single event radiation-harden.Under the single event radiation,the generation probability of the electron-hole pairs is reduced in the channel,and the drain current and collected charges for the novel MOSFETs are lower than that of the conventional double-gate junctionless MOSFETs,meanwhile the impact of the parasitic transistor effect on the devices is reduced.