电场调控的自旋翻转因在低能耗高密度的新型存储器件中有巨大的应用潜力而受到人们的广泛关注.在复相多铁材料中,利用磁电耦合效应有可能实现电场调控自旋的翻转.我们在CoPt/PMN-PT异质结中,利用电场调控矫顽力的变化,实现了电场调控自旋的翻转.在铁磁形状记忆合金Mn-Ni-Sn与0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3组成的复合材料中,通过电场调控交换偏置场的变化,无需偏置磁场就可以实现电场调控自旋的翻转.
Electric-field controlled magnetization reversal has attracted much attention due to its widely application inlow-power high-density memory devices. The coexistence of ferroic properties and magnetoelectric coupling in composite multiferroic materials allow mutual manipulation among their different functions and provide opportunities for the electric-field controlled magnetization reversal. Taking the advantage of the different coercivity caused by the electric field in CoPt/0. 7Pb(Mg1/3Nb2/3) O3-0. 3PbTiO3heterostructures,magnetization reversal could be achieved with the electric field switching on or off. In a Mn-Ni-Sn/0. 7Pb(Mg1/3Nb2/3) O3-0. 3PbTiO3laminate,the exchange bias field of this ferromagnetic shape memory alloy decreased remarkably with the application of electric field. Moreover,the magnetization sign could be switched in this laminate by electric field without the aid of bias magnetic field.