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中文摘要：
采用射频磁控溅射法制备了以低功率溅射得到的PbxSr1-xTiO3（PST）薄膜为缓冲层（同质缓冲层）的PST双层薄膜。通过X-射线衍射、扫描电镜、阻抗分析仪和铁电分析仪对薄膜相结构、表面形貌、介电损耗和铁电性能进行了测试分析。结果表明，以低功率溅射得到的PST薄膜作为同质缓冲层的双层薄膜可减少薄膜的缺陷，从而有效降低介电损耗。
英文摘要：
The PbxSr1-x TiO3 （PST） bilayer thin films have been prepared by the radio frequency magnetron sputtering deposition method. The bilayer thin films use the low density thin films prepared at lower sputtering power as the buffer layer （homogeneity buffer layer）. XRD, SEM, impedance analyzer, ferroelectric analyzer were employed to analyze the phase structure, superficial appearance, dielectric loss and the ferroelectric property of the thin films. The result indicated that using the low density PST thin film as the homogeneity buffer layer could reduce the flaw in the bilayer thin films, thus effectively reduced the dielectric loss.
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