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Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN304.12[电子电信—物理电子学]
  • 作者机构：[1]Department of Physics, School of Science, Beihang University, Beijing 100083, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No 10432050）.
作者： 王金良[1], 毋二省[1]
关键词： B掺杂, P掺杂, 氢化纳米晶硅膜, PECVD法, 制备, 显微结构, PECVD, doped hydrogenated nanocrystalline silicon film, microstructure
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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406