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Microscopic phase-field simulation of ordered domain interfaces formed between DO22 phases along [100] direction

ISSN号：1003-6326
期刊名称：《中国有色金属学报：英文版》
时间：0
分类：TG146.2[金属学及工艺—金属材料;一般工业技术—材料科学与工程;金属学及工艺—金属学] O562.1[理学—原子与分子物理;理学—物理]
作者机构：[1]School of Materials Science and Engineering, Northwestern Polytechnical University, Xi＇an 710072, China, [2]State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi＇an 710072, China
相关基金：Projects（50671084, 50875217） supported by the National Natural Science Foundation of China; Projects（2003E106, SJ08-ZT05） supported by the Natural Science Foundation of Shaanxi Province, China; Project（20070420218） supported by China Postdoctoral Science Foundation

作者：张明义[1], 陈铮[1,2], 王永欣[1], 卢艳丽[1], 张利鹏[1], 赵彦[1]

关键词：微观相场模型, 模拟接口, 界面形成, 原子结构, 排列, 迁移过程, 合金元素, 选择性行为, interface migration, solute segregation, site selectivity, microscopic phase-field, ordered domain interface

中文摘要：

在 DO22 (Ni3V ) 阶段之间形成的订的域接口[100 ] 方向被使用显微镜的阶段地模型在 Ni75AlxV25x 合金的降水进程期间模仿。接口的原子结构，迁居过程，和作文被调查。有四种稳定的订的域接口，在 DO22 阶段之间形成，这被发现[100 ] 他们的方向和所有能移居。在接口的迁居期间，原子的 jump 显示出地点选择行为，每个稳定的接口形成一个特殊转变接口。原子跳选择乐观主义者方法导致接口，和接口的原子结构的移植在移植前后保留一样。合金元素在不同接口有分离或弄空的不同偏爱。根本，四种接口， Ni 和艾尔分离但是 V 弄空。分离和弄空的度在不同接口也是不同的。

英文摘要：

Ordered domain interfaces formed between DO22 （Ni3V） phases along [100] direction during the precipitation process of Ni75AlxV25-x alloys were simulated by using the microscopic phase-field model. The atomic structure, migration process, and compositions of interfaces were investigated. It is found that there are four kinds of stable ordered domain interfaces formed between DO22 phases along [100] direction and all of them can migrate. During the migration of interfaces, the jump of atoms shows site selectivity behaviors and each stable interface forms a distinctive transition interface. The atom jump selects the optimist way to induce the migration of interface, and the atomic structures of interfaces retain the same before and after the migration. The alloy elements have different preferences of segregation or depletion at different interfaces. At all the four kinds of interfaces, Ni and AI segregate but V depletes. The degrees of segregation and depletion are also different at different interfaces.

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