中文摘要：

系统地介绍了导致硅纳米线（SiNWs）光致发光（PL）的主要原理，如量子限制效应、量子尺寸效应、硅纳米颗粒发光机理和杂质缺陷发光机理。同时从SiNWs的直径、测试温度、SiNWs外部包覆层、SiNWs的形态等几个方面出发，详细地归纳总结了近十多年来国内外对SiNWs的PL原理的研究成果及进展。

英文摘要：

The main principles which result in silicon nanowires（SiNWs） photoluminescence （PL） are systemically introduced, for example, quantum confinement effect, quantum size effect, Si nanoparticles emitting mechanism and impurities or defects emitting mechanism. At the same time, the research results and development of SiNWs PL principles in recent ten years both at home and abroad are summerized, from the perspective of the SiNWs diameter, test temperature, SiNWs external coated layer, SiNWs morphology and so on.