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Chemical mechanical polishing of freestanding GaN substrates
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TN304.23[电子电信—物理电子学] TN305[电子电信—物理电子学]
  • 作者机构：[1]Key Laboratory of Advanced Photonie and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
  • 相关基金：Project supported by the State Key Development Program for Basic Research of China （No. 2006CB6049）, the National High Technology Research and Development Program of China （Nos. 2006AA03A103, 2006AA03A118, 006AA03A142, 2006AA03Z411）, the National Natural Science Foundation of China （Nos. 60721063, 0731160628, 60776001, 60676057）, the Doctoral Special Funds of University of China （No. 20050284004）, and the National Foundation for Fostering Talents of Basic Science （No. J0630316）.
作者： 颜怀跃, 修向前, 刘战辉, 张荣, 华雪梅, 谢自力, 韩平, 施毅, 郑有
关键词： GaN, 晶体机械抛光, 表面处理, 外延层, 半导体技术, GaN, chemical mechanical polishing, epitaxial layers
中文摘要：

Corresponding author. Email： xqxiu@mail.nju.edu.cn

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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754