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Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-sca
ISSN号:2158-3226
期刊名称:AIP Advances
时间:2012.3
页码:012191-
相关项目:原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
作者:
Li, Yong-Jun|Sun, Qing-Qing|Chen, Lin|Zhou, Peng|Wang, Peng-Fei|Ding, Shi-Jin|Zhang, David Wei|
同期刊论文项目
原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
期刊论文 24
同项目期刊论文
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Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer depos
Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-O TFT Memory
Distortion of electronic structure in HfO2 induced by the out-diffused As from GaAs substrate
A Novel 1T-1D DRAM Cell for Embedded Application
Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level
Hybrid density functional theory study of Cu(In1-xGax)Se-2 band structure for solar cell application
The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions
Complementary Resistive Switching in Flexible RRAM Devices
Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation