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Effect of Nano Al Interlayer on the Schottky ContactProperty Between Metal and Hg3In2Te6 Wafer
  • ISSN号：1533-4880
  • 期刊名称：Journal of Nanoscience and Nanotechnology
  • 时间：2015.9.1
  • 页码：7113-7116
  • 相关项目：新型近红外探测材料碲铟汞晶体表面及其M/S界面特性研究
作者： Xiaozhen Wang|Li Fu|Yapeng Li|
同期刊论文项目
新型近红外探测材料碲铟汞晶体表面及其M/S界面特性研究
期刊论文 27 会议论文 5 专利 1
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ZnO过渡层对Au/Hg_3In_2Te_6肖特基接触特性的影响研究
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Effect of Passivation on the Electrical Properties ofAu/Hg3In2Te6 Schottky Contact
不同温度下碲铟汞晶体结构的XRD研究
新型Hg3In2Te6芯片引线的键合机制
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Cu / Hg3In2Te6欧姆接触形成机制的研究
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