中文摘要：

采用真空蒸发的方法制备了掺杂原子比为3%、5%和9%的La掺杂和Dy掺杂的ZnO薄膜．用扫描电子显微镜（SEM）、X射线衍射（XRD）谱和X射线光电子能谱（XPS）表征了所制得的ZnO薄膜的特性．发现所有薄膜都沿C轴取向优先生长．在对ZnO薄膜气敏特性的测量中,在低温条件下掺杂ZnO薄膜的电阻比非掺杂ZnO薄膜的小,且对乙醇和丙酮的灵敏度显著增强,且其中Dy掺杂的ZnO薄膜的气敏特性较La掺杂的ZnO薄膜为高．而空气中暴露9个月后的薄膜的气敏特性表明掺杂ZnO薄膜具有很好的稳定性．同时讨论了气敏传感机制和掺杂行为对薄膜灵敏度的影响．

英文摘要：

La and Dy-doped ZnO thin films were prepared via vacuum evaporation method at mass fraction of 3%,5% and 9% dopi ng.The obtained films were characterized by scanning electron microscopy （SEM）,X-ray diffraction （XRD） and X-ray photoelectron spectroscopy （XPS）.The results indicated that all films showed a preferred C-axis growth orientation.Compared with undoped ZnO thin films,the doped films exhibited a downshift of resistance at a low temperature and remarkable increase of sensitivity to ethanol and acetone vapour,and the sensitivity of Dy-doped ZnO thin films were higher than the sensitivity of La-doped ZnO thin films.The films were then exposed bare in air for 9 months and the sensitivity was remeasured.All the films remained the sensitivity at a high level which indicated an excellent stability.The sensing mechanism and the effect of doping behaviour were also discussed.