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中文摘要：
采用NPB掺杂石墨烯作为空穴传输层,制备有机电致发光器件（OLED）,器件结构为ITO/NPB：Graphene（20wt.%）（50nm）/Alq3（80nm）/LiF（0.5nm）/Al（120nm）。将其与标准器件ITO/NPB（50nm）/Alq3（80nm）/LiF（0.5nm）/Al（120nm）作性能比较,研究石墨烯对OLED性能的影响。结果表明,在NPB中掺杂石墨烯薄层的器件,在同等条件下性能最佳,当电流密度为90mA/cm2时器件电流效率达到最大值3.40cd/A,与标准器件最高效率相比增大1.49倍;亮度在15V时达到最大值10 070cd/m2,比标准器件最大亮度增大5.16倍。
英文摘要：
The organic light emitting diode（OLED）was fabricated,which uses graphene doped in NPB as the hole transport layer.The structure of the device is ITO/NPB：Graphene（20wt.%）（50nm）/Alq3（80nm）/LiF（0.5nm）/Al（120nm）.We compare it with the standard device whose structure is ITO/NPB（50nm）/Alq3（80nm）/LiF（0.5nm）/Al（120nm）.The effect of graphene on performance of OLED is investigated.The results show that the device with graphene doped NPB layer presents better performance under the same conditions.When the current density is 90mA/cm2,the current efficiency reaches the maximum value of 3.40cd/A,and compared with the standard device,the maximum efficiency is increased by 1.49times.The device reaches the maximum luminance of 10 070cd/m2 when the driving voltage is 15V,which is increased by 5.16times than that of the standard device.
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