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Accurate measurement and influence on device reliability of defect density of a light-emitting diode

ISSN号：1674-1056
期刊名称：《中国物理B：英文版》
时间：0
分类：TN873.91[电子电信—信息与通信工程] TN312.8[电子电信—物理电子学]
作者机构：[1]Key Laboratory of Information Science and Technology, Graduate School of Tsinghua University at Shenzhen, Shenzhen 518055, China
相关基金：Project supported by the Upgrading Project of Shenzhen Key Laboratory of Information Science and Technology, China （Grant No. CXB20100525038A）, the Shenzhen Science and Technology Development Plan, China （Grant No. 2009003）, and the Science and Technology Program of Nanshan District, Shenzhen, China （Grant No. 2011015）.

关键词： LED器件, 发光二极管, 缺陷密度, 精确测量, 可靠性, 加速老化试验, 光学性能, 芯片尺寸, accurate measurement, defect density, LED, reliability

中文摘要：

A method of accurately measuring the defect density of a high-power light-emitting diode(LED) is proposed.The method is based on measuring the number of emitting photons in the magnitude of 105under the injection current as weak as nA and calculating the non-radiative recombination coefficient which is related to defect density.Defect density is obtained with the self-developed measurement system,and it is demonstrated that defect density has an important influence on LED optical properties like luminous flux and internal quantum efficiency(IQE).At the same time,a batch of GaN-based LEDs with the chip size of 1 mm×1 mm are selected to conduct the accelerated aging tests lasting for 1000 hours.The results show that defect density exhibits a greater variation and is more sensitive to LED reliability than luminous flux during aging tests.Based on these results,it is concluded that for the GaN-based LED with a chip size of 1mm×1mm,if its defect density is over 1017/cm3,the LED device performance suffers a serious deterioration,and finally fails.

英文摘要：

A method of accurately measuring the defect density of a high-power light-emitting diode （LED） is proposed. The method is based on measuring the number of emitting photons in the magnitude of 105 under the injection current as weak as nA and calculating the non-radiative recombination coefficient which is related to defect density. Defect density is obtained with the self-developed measurement system, and it is demonstrated that defect density has an important influence on LED optical properties like luminous flux and internal quantum efficiency （IQE）. At the same time, a batch of GaN-based LEDs with the chip size of 1 minx 1 mm are selected to conduct the accelerated aging tests lasting for 1000 hours. The results show that defect density exhibits a greater variation and is more sensitive to LED reliability than luminous flux during aging tests. Based on these results, it is concluded that for the GaN-based LED with a chip size of 1 mm ~ I mm, if its defect density is over 1017/cm3, the LED device performance suffers a serious deterioration, and finally fails.

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