中文摘要：

采用HF／HNO3酸刻蚀液对金刚石线切割太阳电池多晶硅片进行制绒研究，对比分析了刻蚀液浓度、刻蚀时间以及以H2O和CH3COOH为添加剂等因素下的多晶硅片绒面形貌特性。结果表明：富HF体系，金刚石线切割多晶硅片表面的划痕加深，但其表面刻蚀效果较好；富HNO3体系，金刚石线切割多晶硅片表面往复纹微消除，而表面制绒效果不佳；然而，随着时间延长，富HF和富HNO3刻蚀多晶硅片表面腐蚀坑均由较小凹坑状逐渐变大,最终形成条状腐蚀坑；与H2O为添加剂相比，CH3COOH下的硅片表面腐蚀坑分布较均匀。研究成果为金刚石线切割技术应用于多晶硅片提供了技术支撑。

英文摘要：

Diamond wire sawn solar cell muticrystalline silicon wafers was prepared through used HF/HNO3 acid etching. The surface characteristics of diamond wire sawn muticrystalline silicon wafers were contrastive analyzed in the different factors such as Etching concentration, etching time and H2O, CH3COOH as additives. The results show that, in the HF-rich etching system, the scratch on the diamond wire sawn muticrystalline silicon is deepen, but the effect of surface etching is better. In the HNO3-dch etching system, the saw marks on the diamond wire sawn muticrystalline silicon were removed, but exhibited poor surface etching effect. However, with the extension of time, the small corrosion pits was gradually larger on the surface of muticrystalline silicon, and eventually form the strip corrosion pits in the HF-rich etching system and HNO3-rich etching system. Compared with the H2O, the corrosion pits on the surface of silicon wafer were uniform in the CH3COOH. The results provide the technology foundation for the diamond wire sawn muticrystalline silicon wafers.