中文摘要：

首先在蓝宝石衬底上旋涂PMMA／copolymer双层胶，然后再进行电子束光刻处理，随后溅射铝膜，并结合剥离技术，从而制备图形化金属铝膜；最后再采用两步热处理法，使图形铝膜发生固相外延反应。在此过程中，侧重于电子束光刻和高温热处理的工艺优化研究。SEM测试结果表明，图形化铝膜在450℃低温氧化热处理24h后，其图形形貌没有发生明显改变；在温度低于1200℃的高温热处理1h后，图形仍然存在。HRXRD分析表明，图形化铝膜在450oC低温热处理24h后再在1000℃高温热处理1h，可在蓝宝石衬底上形成氧化铝外延薄膜；并且相比于基片，氧化铝外延薄膜的结晶质量还有所提高。本方法成功实现了高效大功率用LED蓝宝石图形衬底的制备。

英文摘要：

In this paper, patterned sapphire substrates were prepared by dual stage annealing of patterned AI films prepared by electron beam lithography of PMMA/copolymer bilayer resist. The designed four kinds of A1 patterns were obtained by optimizing the e-beam lithography process. The little change in the morphology of the patterns was observed after annealing for 24 h at 450 ℃. The patterns were retained after high temperature annealing for 1 h at less than 1200 ℃ HRXRD results indicated that the island patterns are epitaxially grown on sapphire substrates by dual-stage annealing for 24 h at 450℃ and then 1 h at 1000 ℃. Furthermore, the alumina epitaxial patterns have higher crystalline quality compared with sapphire substrates. The above-mentioned method has sueessfully achieved the preparation of patterned sapphire substrates for high-efficieney ＆ high-power LED applications.