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Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN24[电子电信—物理电子学]
  • 作者机构：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos 60706009, 90401025, 60736036, 60777021 and 60476009）, the National Key Basic Research Program of China （Grant Nos 2006CB604901 and 2006CB604902） and the National High Technology Research and Development Program of China （Grant Nos 2006AA01Z256, 2007AA03Z419 and 2007AA03Z417）.Acknowledgement We would like to thank Professor Jin Peng for his helps in the measurements of the low temperature electroluminescence.
作者： 梁松[1], 朱洪亮[1], 潘教青[1], 赵玲娟[1], 王鲁峰[1], 周帆[1], 舒惠云[1], 边静[1], 安欣[1], 王圩[1]
关键词： 砷化铟/砷化镓量子点, 光致发光, 激光作用, 金属-有机化学气相沉积, metal-organic chemical vapour deposition, InAs/GaAs quantum dots, laser
中文摘要：

E-mail： liangsong@red.semi.ac.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406