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双栅调控的硅量子线中的库仑振荡效应
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：TN304.054[电子电信—物理电子学]
  • 作者机构：[1]南京大学物理系,固体微结构国家实验室,南京210093, [2]无锡华润华晶微电子有限公司,无锡214061
  • 相关基金：国家重点基础研究发展计划（批准号：2006CB932202）; 国家自然科学基金（批准号：60571008 60721063）资助的课题~~
作者： 张贤高[1], 方忠慧[1], 陈坤基[1], 钱昕晔[1], 刘广元[1], 徐骏[1], 黄信凡[1], 何飞
关键词： 库仑振荡, 单电子效应, 硅量子线, Coulomb oscillations, single electron effect, silicon nanowire
中文摘要：

基于单电子隧穿和库仑阻塞效应,研究了硅量子线中的单电子输运特性.利用绝缘体上硅薄膜材料作为衬底构建侧栅结构的硅量子线单电子晶体管,通过背栅和侧栅对量子线的电子输运特性进行调制.实验发现,在硅量子线中分别观察到背栅和侧栅调制的单电子效应和库仑振荡现象.从微分电导的二维灰度轮廓图,清楚地观察到了库仑阻塞区,说明由于栅压导致在硅量子线中形成了库仑岛.

英文摘要：

The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage,the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics,the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876