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中文摘要：
采用直流磁控溅射加负偏压方法和退火工艺制备了Mg_2Si半导体薄膜,研究了不同负偏压对Mg膜的沉积速率、Mg_2Si薄膜结构以及电阻率的影响。结果表明,随着负偏压的增大,因压实膜层和二次溅射效应,Mg膜的沉积速率越来越小;在未加负偏压时,Mg_2Si薄膜的衍射峰最强、样品表面平整致密,当衬底加上负偏压后,Mg_2Si衍射峰都有所减弱,样品表面变得凹凸不平;当负偏压达到–150 V时,表面已呈现明显的熔融状态,表明负偏压对Mg_2Si薄膜的晶体结构没有有益影响。Mg_2Si薄膜的电阻率随着所加负偏压的增大先减小后增大,并在–90 V时达到最小值。
英文摘要：
Semiconducting Mg_2Si films were fabricated by DC magnetron sputtering at various negative bias.Mg film was deposited onto Si substrate and subsequent low vacuum heat treatment was carried out.The deposition rate of Mg films,structure,surface topography and resistivity of Mg_2Si films at different negative bias were studied.The results show that as the bias voltage increases,the deposition rate of Mg films decreases due to the effect of compaction and resputtering phenomena.The patterns of XRD and SEM indicate that Mg_2Si films have more strong diffraction peaks and more smooth surface at zero bias voltage.The quality of Mg_2Si films become worse with the increasing of bias voltage.Melting phenomenon appeares on the surface of Mg_2Si film at a bias voltage of –150 V.With the increasing of bias voltage,the resistivity of Mg_2Si films decreases firstly and then increases,and reaches the minimum at the bias of –90 V.
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