中文摘要：

在直流电场作用下，硅单晶的反演对称性被破坏，从而诱导产生二阶非线性光学效应。主要研究了硅材料在外加直流电场作用下诱导产生的场致线性电光效应。以沿（111）面切割的近本征硅材料为样品，采用平行板电容器结构，通过横向电光调制实验，观测到在不同直流偏压下，电光信号随调制电压而线性增加，且直流偏压越大，电光信号增加的斜率越大。进一步的研究表明：硅材料场致线性电光信号的大小随直流偏压的增加而线性增加。这种场致线性电光效应可被用于制作新型的硅基高速电光调制器。

英文摘要：

The DC electric field can break the inversion symmetry of silicon, thus induce the second- order nonlinear optical effect in silicon. Linear electro-optic effect induced by the applied DC electric field was mainly researched in silicon crystal. （lll）-cut near-intrinsic silicon was used as the sample, which adopted a planar capacitor configuration. Experiments of the transverse electro-optic modulation show that the electro-optic signal linearly increases with the increase of the modulating voltage when different DC biases are applied on silicon sample, moreover, the higher the DC bias, the steeper the rising slope of electro-optic signal. Further studies indicate that the electric-field-induced linear electro- optic signal is linearly increasing with the increase of the DC bias. The electric-field-induced linear electro-optic effect can be used for manufacturing novel high-speed silicon electro-optic modulators.