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中文摘要：
N型多米诺或门是高性能集成电路常用的动态单元,负偏置温度不稳定性（NBTI）引起的PMOS管老化问题已成为降低多米诺或门电路可靠性的主要因素之一。仿真分析表明,N型多米诺或门中各种PMOS管受NBTI的影响有明显差别。针对这种差异,提出一种双阈值配置的抗老化多米诺或门。对电路老化起关键作用的保持PMOS管和反相器PMOS管采用低阈值电压设计。仿真结果表明,在保证噪声容限和功耗的条件下,该双阈值配置PMOS管的多米诺或门在10年NBTI老化后仍有0.397%的时序余量。
英文摘要：
The N-type domino OR gate is widely used for designing the dynamic element of high performance integrated circuits,one major reliability concern of which is NBTI induced PMOS transistor aging. It was found that the obvious differences existed among the PMOS transistors affected by NBTI in N-type domino OR gates,based on which a new domino OR gate design scheme using double threshold PMOS transistors configuration was presented. The keeper and inverter PMOS transistors,which were critical for circuit aging,were configured with low threshold voltages. The simulation results showed that the domino OR gate with double threshold configuration had still 0. 397% timing margin after 10 years NBTI aging,while ensuring good noise and power consumption performances.
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