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碳化硅高温吸收剂的研究现状
  • 期刊名称：Rare Metal Materials and Engineering, 36卷, pp 94-9
  • 时间：0
  • 分类：TQ174[化学工程—陶瓷工业;化学工程—硅酸盐工业] TM25[电气工程—电工理论与新技术;一般工业技术—材料科学与工程]
  • 作者机构：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072, [2]西安电子科技大学技术物理学院,陕西西安710071
  • 相关基金：国家自然科学基金资助项目（50572090）
  • 相关项目：掺杂对纳米SiC复介电常数频散效应的影响
关键词： SIC, 掺杂, 高温吸收剂, 吸波材料, silicon carbide, doping, high temperature absorber, radar absorbing materials
中文摘要：

综述了SiC的性质和作为高温吸收剂的吸波性能，并对掺杂可引起其电学性能的改善作了一定的阐述。论述了合成纳米SiC吸收剂粉末的制备方法：化学气相沉积（CVD）法、激光法、溶胶-凝胶和碳热还原法，分析了它们产生微波损耗的机理。

英文摘要：

The properties and microwave absorbing performance for high temperature of silicon carbide are reviewed, and the improvements on its electrical properties by doping are discussed. The synthesis methods of nano-SiC absorber are showed in detail, which have chemical vapor deposition method, laser method and sol-gel and carbothermal reduction method. The mechanisms of microwave loss are analyzed.

同期刊论文项目
掺杂对纳米SiC复介电常数频散效应的影响
期刊论文 38 会议论文 5
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