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Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：0
  • 页码：1296-1298
  • 语言：英文
  • 相关项目：原子层淀积高介电常数栅介质的界面层抑制和性能调控
作者： Wang, Peng-Fei|Xu, Yan|Chen, Lin|Sun, Qing-Qing|Zhang, David Wei|Zhou, Peng|Ding, Shi-Jin|
同期刊论文项目
原子层淀积高介电常数栅介质的界面层抑制和性能调控
期刊论文 27
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