中文摘要：

氮化镓（GaN）材料具有优异的物理特性,非常适合于制作高温、高速和大功率电子器件,具有十分广阔的市场前景。Si衬底上GaN基功率开关器件是目前的主流技术路线,其中结型栅结构（p型栅）和共源共栅级联结构（Cascode）的常关型器件已经逐步实现产业化,并在通用电源及光伏逆变等领域得到应用。但是鉴于以上两种器件结构存在的缺点,业界更加期待能更充分发挥GaN性能的＂真＂常关MOSFET器件。而GaN MOSFET器件的全面实用化,仍然面临着在材料外延方面和器件稳定性方面的挑战。

英文摘要：

GaN-based materials have bright market prospects in the field of high-temperature, high-speed and high-power applications owing to their superior physical properties. GaN-based power devices on Si substrate are current mainstream techniques, in which p-gate and cascade structure have been applied in industrial productions such as universal power supply and PV inverter. In view of the disadvantages of the above two kinds of device structure, highperformance true normally-off MOSFET is still recognized as the direction and goal in the industry. GaN MOSFET devices still face many technical bottlenecks and challenges in terms of materials epitaxy and devices stability.