中文摘要：

室温下,以CdSO4、H2SeO3和Na2SO4为原料,采用二电极体系,利用电化学法在ITO玻璃基底上沉积了CdSe薄膜。采用高分辨X射线衍射仪（HRXRD）、场发射扫描电镜（FESEM）、原子力显微镜（AFM）、紫外-可见-近红外（UV-VIS-NIR）分光光度计、荧光分光光度计（PL）对不同沉积电压下所制备的薄膜的晶体结构、形貌及光学性能进行分析表征。结果表明：所制备的薄膜为立方相CdSe,呈纳米颗粒状,部分粒子表现出不均匀团聚。紫外吸收光谱的吸收峰较体相CdSe有较大的蓝移,且导致禁带宽度发生改变,表现出量子尺寸效应。样品发射光谱表现出荧光现象,且单色性好。适当的沉积电压对CdSe薄膜的形貌和质量起关键作用,同时讨论了其反应机理。

英文摘要：

Using CdSO4,H2SeO3,and Na2SO4 as raw materials,CdSe thin films were fabricated on ITO glass substrate at room temperature by electrochemical method in a two-electrode system.The samples were characterized by HRXRD,FESEM,AFM,UV-VIS-NIR,and PL to investigate the morphology,crystalline structure,and optical properties of the films deposited at different deposition voltage.The results show that the CdSe films formed by nanoparticles are cubic phase,while the nanoparticles are partially agglomerated inhomogeneously.The absorption peak of the samples has larger blue shift,and the band gap energy is changed compared with those obtained from bulk CdSe,indicating a quantum size effect.The PL spectra of the samples show the fluorescence phenomenon with good monochromaticity.The deposition voltage plays an important role in the surface morphology and quality of the films,and a possible mechanism for the reaction is also discussed.