位置：成果数据库 > 期刊 > 期刊详情页
Nano-ZnO embedded SiO2 glass with intense ultraviolet emission
  • 时间：0
  • 相关项目：透明导电金属氧化物薄膜的P型掺杂研究
同期刊论文项目
透明导电金属氧化物薄膜的P型掺杂研究
期刊论文 42 会议论文 2 著作 1
同项目期刊论文
Reactive DC magnetron deposition of copper nitride films for write-once optical recording
P-type tin-indium oxide films prepared by thermal oxidation of metallic InSn alloy films
电阻开关式非挥发性随机存储器的机理及其材料
Gallium oxide films for filter and solar-blind UV detector
掺Mn 硅酸锌薄膜中微量氧化锌对发光强度的影响
Centimeter-Long Single Crystalline ZnO Fibres Prepared by Vapour Transportation
柔性衬底PET上低温沉积Zn1-xCdxO透明导电薄膜
The effect of doping by IV-family elements on the electronic structure and electrical characteristic
Synthesis of mesoporous SiO2 glass by a novel chemical method
III族元素掺杂对SnO2电子结构及电学性能的影响
Fabrication and characteristics of the low-resistive p-type ZnO thin films by DC reactive magnetron
Preparation and characterization of p-type transparent conducting tin-gallium oxide films
Low resistivity transparent conducting CdO thin films deposited by DC reactive magnetron sputtering
Effects of Substrate Temperature on the Properties of N-doped P-type ZnO Films Deposited by DC React
Preparation of p-type transparent conducting tin-antimony oxide thin films by DC reactive magnetron
导电纳米氧化锌颗粒的制备与表征，功能材料
用于45nm 及以下集成电路工艺的高介电常数绝缘栅材料
Mg-Al 共掺对直流磁控溅射ZnO薄膜性能的影响
直流反应磁控溅射制备氧化铅薄膜
氧化锌薄膜紫外光电导研究
利用HRXRD和UV-Vis反射光谱确定AlGaN/GaN/Al2O3的结构与成分
Effects of Na concentration on properties of Na-doped p-type ZnO films
直流磁控溅射法制备Al掺杂CdO薄膜与表征
掺氮氧化镓薄膜－理论计算与制备
低转变温度的热致变色SnNx 薄膜的制备及表征
热蒸发法制备厘米级ZnO 晶须及特性研究
PLD 法制备硅基掺Mn 硅酸锌发光薄膜的特性
P 型透明导电的锡锑氧化物薄膜的制备与表征
基于柱状ZnO薄膜的超低阈值电压压敏电阻
Transparent p-type conducting indium-doped SnO2 thin films deposited by spray pyrolysis
薄膜厚度对Au/ZnO/n＋-Si薄膜压敏电阻器阈值电压的影响
激光诱导击穿光谱及其在元素分析中的应用
氧化锌薄膜紫外光电导机理研究
一种基于锡锑氧化物的透明PN结及整流特性
利用Mg含量控制Zn1-xMgxO薄膜压敏电阻器的阈值电压
Ⅲ族元素掺杂对SnO2电子结构及电学性能的影响
TiO_2薄膜的制备及其压敏特性研究
射频磁控溅射法沉积透明柔性导电CdO薄膜
Characterization and Stability of Na-doped p-type ZnO Thin Films Preparation by Reactive DC Magnetron Sputtering
Fabrication and Characterization of Solar Cells Made of p-CuO/n-Si Hetero Junctions
衬底温度对直流反应磁控溅射法制备的N掺杂p型ZnO薄膜性能的影响