位置：成果数据库 > 期刊 > 期刊详情页
AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam
  • 期刊名称：J. Crystal Growth
  • 时间：0
  • 页码：1935-1938
  • 语言：中文
  • 相关项目：采用非矩形量子阱的磷化铟基波长扩展激光器
作者： Y. Gu, Y. G. Zhang, K. Wang, A. Z. Li, Y. Y. Li|
同期刊论文项目
采用非矩形量子阱的磷化铟基波长扩展激光器
期刊论文 15 专利 4
同项目期刊论文
Distinction investigation of InGaAs photodetectors cutoff at 2.9 μ m
InP-based InGaAs/InAlGaAs digital alloy quantum well laser structure at 2 μ m
Characteristics of InP-based InGaAs photodetector structures with lattice mismatch up to 2.6% on InA
异质界面数字递变超晶格对扩展波长 InGaAs 光电探测器性能的改善
基于半导体激光器的光声光谱气体检测及其进展
双异质结扩展波长 InGaAs PIN 光电探测器暗电流研究
Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back i
Performance of gas source MBE grown wavelength extended InGaAs photodetectors with different buffer
Structural and photoluminescence properties of highly strain-compensated InAlAs/InGaAs superlattice
中红外半导体光源和探测器件及其应用
双异质结扩展波长InGaAs PIN光电探测器暗电流研究
InP-based InGaAs/InA1GaAs digital alloy quantum well laser structure at 2μm
晶格失配度达2.6%的波长扩展InGaAs/InP光电探测器结构
异质界面数字梯度超晶格对扩展波长InGaAs光电探测器性能的改善