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Comparative study on strain induced electrical properties modulation of Si p-n junctions
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013
  • 页码：093502-
  • 相关项目：纳米MOS器件中的表面粗糙度散射机理研究
作者： Wangran Wu|Yu Pu|Junzhuan Wang|Xiangming Xu|Jiabao Sun|Ze Yuan|Yi Shi|Yi Zhao|
同期刊论文项目
纳米MOS器件中的表面粗糙度散射机理研究
期刊论文 9 会议论文 6
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