位置：成果数据库 > 期刊 > 期刊详情页
基于相变存储器器件单元的电流脉冲测试系统
  • ISSN号：1001-5868
  • 期刊名称：《半导体光电》
  • 时间：0
  • 分类：TN407[电子电信—微电子学与固体电子学]
  • 作者机构：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050, [2]中国科学院大学,北京100080
  • 相关基金：国家“973”计划项目（2011CB9328004,2010CB934300,2011CBA00607）;国家集成电路重大专项项目（2009ZX02023-003）;国家自然科学基金项目（60906004,60906003,61006087,61076121,61176122,61106001）;上海市科委项目（11DZ2261000,1052nm07000,11QA1407800）;中国科学院资助项目（20110490761）.
作者： 王玉婵[1,2], 陈小刚[1], 宋志棠[1], 陈一峰[1], 王月青[1,2], 陈后鹏[1], 饶峰[1]
关键词： 相变存储器, SET, RESET, 电流脉冲, 测试系统, phase change memory （PCM）, set, reset, current pulses, test system .
中文摘要：

相变存储器单元的测试主要包括set、reset和read操作，目前国内外多采用施加电压脉冲的方法对相变存储单元进行reset操作，这不仅容易造成器件的损坏，而且使得相变过程中瞬态电流的准确计算非常困难。与常规测试方法不同，文章提出一种专门针对相变存储器的电流脉冲测试系统，该系统可以提供准确可控的电流脉冲来对相变存储器器件单元进行操作。

英文摘要：

Tests for phase change memory （PCM） device unit mainly includes set, reset and read. Traditional test systems usually apply voltage pulses to do reset operation on phase change memory, but this measurement method not only easily results in damage to the devices, but also makes it very difficult to measure the transient current. Unlike the conventional test methods, a current pulse test system for PCM device unit is introduced in this work and the system can supply precise and controllable current pulses to operate PCM.

同期刊论文项目
三维立体堆叠相变存储器制造方法探索
期刊论文 36
纳米复合相变存储材料Si-Sb2Te3的相转变机理研究
期刊论文 29
Si基新型相变材料（Si-Sb-Te）及其器件基础研究
期刊论文 39
新型纳米复合相变材料的制备及其在相变存储器中的应用
期刊论文 59 专利 17
新型相变材料的设计与优选
期刊论文 35
应用于RFID芯片中低功耗相变存储器的研究
期刊论文 16
　相变存储器规模制造技术关键基础问题研究
期刊论文 24
同项目期刊论文
Phase Change Memory Cell Using Si2Sb2Te3 Material
Si(3.5)Sb(2)Te(3) Phase Change Material for Low-Power Phase Change Memory Application
Nano composite Si2Sb2Te film for phase change memory
Ab initio study of Sb(2)Se(x)Te(3-x)(x=0, 1, 2) phase change materials
Instability of nitrogen doped Sb(2)Te(3) for phase change memory application
Experimental and theoretical study of silicon-doped Sb(2)Te(3) thin films: Structure and phase stabi
Si2Sb2Te6 Phase Change Material for Low-Power Phase Change Memory Application
Local atomic structure in molten Si3Sb2Te3 phase change material
Scaling properties of phase-change line memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
大电流负载的片上LDO系统设计
Study on GeGaSbTe film for long data retention phase change memory application
Understanding the early cycling evolution behaviors for phase change memory application
Investigation of Sb-rich Sb-Te binary films used as phase change material
Nitrogen-doped Sb-rich Si-Sb-Te phase-change material for high performance phase-change memory
Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/ BCl3 inductively coupled plasmas
Influence of silicon on the thermally-induced crystallization process of Si-Sb4Te phase change mater
Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory
Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material
Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory applicati
RESET Distribution Improvement of Phase Change Memory: The Impact of Pre-Programming
Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application
Etching of new phase change material Ti0.5Sb2Te3 by Cl2/Ar and CF4/Arinductively coupled plasmas
Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memor
Electron beam annealing for component optimization in Si-Sb-Te material
基于相变存储器的SD卡系统设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
相变存储器失效时间分析
Phase Change Characteristics of SiO2 Doped Sb2Te3 Materials for Phase Change Memory Application
Sb-rich Si-Sb-Te Phase-Change Material for Phase-Change Random Access Memory Applications
N-doped Sb2Te phase change materials for higher data retention
Study on the crystallization behaviors of Si2Sb2Tex materials
Study on TiO2-doped Ge2Te3 films for phase-change memory application
Study on the impact of the initialization process on the phase change memory
Investigation of Al doping on Ge55Te45 for phase change memory application
Advantages of GeTeN material for phase change memory applications
Scaling properties of phase-change line memory
Investigation of Sb-rich Si2Sb2+x Te-6 material for phase change random access memory application
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
Al1.3Sb3Te material for phase change memory application
Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power
Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-c
Phase transition characteristics of Al-Sb phase change materials for phase change memory application
Ga-Sb-Se material for low-power phase change memory
Superlattice-like electrode for low-power phase-change random access memory
Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
大电流负载的片上LDO系统设计
Stress reduction and performance improvement of phase change memory cell by using Ge2Sb2Te5-TaOx com
High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material
Improved thermal and electrical properties of nitrogen-doped Ge-rich Ge3Sb2Te5 for phase-change memo
Instability of nitrogen doped Sb2Te3 for phase change memory application
Advantages of SixSb2Te phase-change material and its applications in phase-change random access memo
Sb2Te3-HfO2 composite films for low-power phase change memory application
Phase Change Memory Based on (Sb2Te3)(0.85)-(HfO2)(0.15) Composite Film
Sb2Te3-Ta2O5 nano-composite films for low-power phase-change memory application
Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films
Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
Ga14Sb86 film for ultralong data retention phase-change memory
Crystallization Process of Amorphous GaSb5Te4 Film for High-Speed Phase Change Memory
Investigation of HfO2 doping on GeTe for phase change memory
Design and Fabrication of Dual-Trench Epitaxial Diode Array for High-Density Phase-Change Memory
Sb-rich Si-Sb-Te phase change material for multilevel data storage: The degree of disorder in the cr
Si-Sb-Te materials for phase change memory applications
Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2T
SixSb2Te materials with stable phase for phase change random access memory applications
Scaling properties of phase-change line memory
Sb Rich Ge2Sb5Te5 Alloy for High-Speed Phase Change Random Access Memory Applications
Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applications
An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
Pseudobinary Al2Te3-Sb2Te3 material for high speed phase change memory application
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
大电流负载的片上LDO系统设计
Optimization of 40-nm Node Epitaxial Diode Array for Phase-Change Memory Application
Mechanism of Oxidation on Si2Sb2Te5 Phase Change Material and Its Application
Scaling properties of phase-change line memory
An Integrated Phase Change Memory Cell with Dual Trench Epitaxial Diode Selector
Phase Change Line Memory Cell Based on Ge2Sb2Te5 Fabricated Using Focused Ion Beam
Superlattice-like GaSb/Sb2Te3 films for low-power phase change memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
Germanium Nitride as a Buffer Layer for Phase Change Memory
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
基于PCRAM数据页聚簇的缓冲算法
三维相变存储阵列驱动二极管的制备研究
一种滞环恒流LED驱动电路的电流采样电路
Thermal effect of Ge2Sb2Te5 in phase change memory device
大电流负载的片上LDO系统设计
基于相变存储器的SD卡系统设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于二极管单元的高密度掩模ROM设计
Direct observation of metastable face-centered cubic Sb2Te3 crystal
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
相变存储器失效时间分析
Scaling properties of phase-change line memory
Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material
用于相变存储器的超低输出纹波电荷泵
Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma
An SPICE model for phase-change memory simulations
基于0．13μm工艺的8Mb相变存储器
一种具有掉电数据保持功能的触发器设计
基于相变存储器的SD卡系统设计
Ge_2Sb_2Te_5的化学机械抛光研究进展
Endurance characteristics of phase change memory cells
DOIND： a technique for leakage reduction in nanoscale domino logic circuits
The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory
Chemical mechanical planarization of amorphous Ge_2Sb_2Te_5 with a soft pad
操作电流对相变存储器单元疲劳特性的影响
带轻载变频模式的升压式DC-DC转换器设计
基于PCRAM数据页聚簇的缓冲算法
基于二极管单元的高密度掩模ROM设计
A Phase Change Memory Chip Based on Ti Sb Te Alloy in 40-nm Standard CMOS Technology
Thermal effect of Ge2Sb2Te5 in phase change memory device
Chemical mechanical planarization of Ge2Sb2Te5 using IC1010 and Politex reg pads in acidic slurry
大电流负载的片上LDO系统设计
Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid
相变存储器失效时间分析
期刊信息
  • 《半导体光电》
  • 中国科技核心期刊
  • 主管单位:信息产业部
  • 主办单位:中国电子科技集团公司第四十四研究所（重庆光电技术研究所）
  • 主编：江永清
  • 地址：重庆市南岸区南坪花园路14号
  • 邮编：400060
  • 邮箱：soe@163.net
  • 电话：023-65860286
  • 国际标准刊号：ISSN：1001-5868
  • 国内统一刊号：ISSN：50-1092/TN
  • 邮发代号:
  • 获奖情况:
  • 重庆市首届十佳期刊称号，1999年,信息产业部1999-2000年度优秀电子期刊称号
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,荷兰文摘与引文数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:5924