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中文摘要：
铁电材料在铁电存储器等领域具有良好的应用前景，受到极大的关注，其中铋层状铁电薄膜因为其良好的铁电性，得到了广泛的研究。采用溶胶-凝胶法在Pt（111）／Ti／SiO2／Si（100）基底成功沉积出（Bi3．7Dy0．3）（Ti2．8V0．2）012（BDTV）的A、B位同时掺杂的铁电薄膜，发现这种双掺能够显著改善薄膜的铁电性。研究了650～800℃不同退火温度下，BDTV铁电薄膜的铁电性能、晶体结构及表面形貌变化。通过SEM分析发现，温度为750℃时，薄膜的颗粒生长较好，薄膜的铁电性能最佳。
英文摘要：
The ferroelectric materials attract much attention for its promising application prospect in the ferroelectric memories. The Bi layer-structured ferroelectric thin film receives extensive research for its good performance. With the substitutions of both A-site ions and B-site ions in BIT, （Bi3.7Dy0.3）（Ti2.8V0.2）O12 （BDTV） ferroelectric thin films were deposited successfully on Pt （ 111 ） /Ti/SiO2/Si （100） substrate by sol-gel method. It is found that the double substitutions can improve the ferroelectric characteristics greatly. The ferroelectric performance, crystal structure and surface morphology were studied at the annealing temperatures of 650 - 800 ℃. The SEM analysis shows that the grains crystallize better and the thin films have the optimal ferroelectric performance at 750℃.
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