Band gap engineering of atomically thin two-dimensional semiconductors
- ISSN号:1674-1056
- 期刊名称:《中国物理B:英文版》
- 时间:0
- 分类:O[理学]
- 作者机构:Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoeleetronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
- 相关基金:Project supported by the National Natural Science Foundation of China (Grant Nos. 11374092, 61474040, 61574054, and 61505051), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Science and Technology Department of Hunan Province, China (Grant No. 2014FJ2001).
中文摘要:
Corresponding author. E-mail: zhuxiaoli@hnu.edu.cn
Corresponding author. E-mail: anlian.pan@hnu.edu.cn