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Controllable growth of dielectric/semiconductor integrated films
  • ISSN号：1001-6538
  • 期刊名称：科学通报(英文版)
  • 时间：0
  • 页码：2681-2687
  • 语言：中文
  • 分类：O484.1[理学—固体物理;理学—物理] TN304.23[电子电信—物理电子学]
  • 作者机构：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China
  • 相关基金：Project supported by the Major State Basic Research Development Program of China （Grant No. 61363） and the National Natural Science Foundation of China （Grant Nos. 50772019 and 61021061）.
  • 相关项目：信息薄膜与LTCC集成器件
作者： Zhang WanLi|Li YangRong|Luo Wenbo|Zhu Jun|Liu XingZhao|
关键词： 激光分子束外延, GAN薄膜, AL2O3, 厚度, 微观结构, 反射高能电子衍射, 生长模式, 氮化镓薄膜, reflection high energy electron diffraction, thin films, laser molecular beam epitaxy, GaN,sapphires
中文摘要：

Corresponding author. E-maih junzhu@uestc.edu.cn

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