中文摘要：

为了更好地研究温度对碳化硅结势垒肖特基二极管（SiC JBS）静态电学参数的影响,我们成功制备了1.2 k V SiC JBS并对其在25℃-150℃温度范围内的静态I-V特性进行了研究。结果显示,常温工况下,所制器件在偏压为1.5 V时的正向电流可以达到5 A,而反向击穿电压高于1 300 V,具有良好的正、反向静态特性;高温工况下（150℃）,所制器件可以正常工作。随着温度的升高,器件的肖特基势垒高度及理想因子基本保持不变,具有良好的稳定性。正向工作时,由于材料迁移率的下降,器件导通电阻随着温度的升高而不断增大（为正温度系数）;反向工作时,击穿电压没有随着温度的升高而退化,漏电流则随着温度的升高而不断上升,低压时150℃状态下漏电流相较于常温状态的上升了1.5个数量级,而高压时同样情况下仅上升了1个数量级,符合雪崩击穿机制。

英文摘要：

In order to research the effect of temperature on static electrical parameters of 4H–SiC junction barrier Schottky（JBS） diode,1.2 k V 4H–SiC JBS diodes were fabricated and their current-voltage characteristics were measured in the range of 25 ℃ -150 ℃. The results illustrate the forward current is 5 A at room temperature with forward voltage drop of 1.5 V and its breakdown voltage can reach to 1 300 V at least, illustrate a good static I-V characteristic. Meanwhile, the fabricated device can work normally under high temperature（150 ℃）, and the schottky height and ideal factor remain unchanged with temperature increasing, thus it has good stability. However, its onresistance increases with temperature rising due to the decreasing of mobility of carrier, which shows positive temperature coefficient. At reverse bias, breakdown voltage does not degrade as temperature rising. Reverse leakage current rises by almost 1.5 orders of magnitude at low reverse voltage comparing to the reverse leakage current at room temperature and rises by only 1order of magnitude at high reverse voltage with temperature increasing, which is in accord with avalanche breakdown mechanism.