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Effect of light Si-doping on the near-band-edge emissions in high quality GaN
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2012
  • 页码：053104-0531044
  • 相关项目：紫外-红外双色探测材料和器件新原理研究
作者： Yang, H.|Zhao, D.G.|Jiang, D.S.|Wu, L.L.|Li, L.|Chen, P.|Liu, Z.S.|Zhu, J.J.|Wang, H.|
同期刊论文项目
紫外-红外双色探测材料和器件新原理研究
期刊论文 55
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