在 Si (100 ) 底层上扔的 La_(0.85 )Sr_(0.015 ) MnO_3/Fe 异种结构被劈啪作响的磁控管准备。在在在在 77 K 的 current-in-plane 几何学 andcurrent-perpendicular-to-plane 几何学之间的电压信号的样品和差别的导致激光的电压被调查。这差别能被归因于不同运输机制。
The La0.85Sr0.015MnO3/Fe heterostructure deposited on Si (100) substrate was prepared by the magnetron sputtering. The laser-induced voltage in the sample and the difference in the voltage signals between the current-in-plane geometry and current-perpendicular-to-plane geometry at 77 K were investigated. This difference can be attributed to the different transport mechanisms.