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中文摘要：
本文研究了利用金属有机物化学汽相淀积系统（MOCVD）生长高质量不同Al组分AlxGa1-xN薄膜（0．13〈x〈0．8）。扫面电子显微镜（SEM）照片表明生长的AlN插入层有效地调节了AlGaN层与GaN支撑层的应力，使AlGaN表面平整无裂纹，原子力显微镜（AFM）测量得到所有AlGaN薄膜粗糙度均小于1nm。通过原位干涉谱发现，AlGaN薄膜生长速率主要由Ga流量大小控制，随Al组分升高逐渐降低。利用X射线衍射和卢瑟福背散射（RBS）两种方法确定AlGaN薄膜的Al组分，发现Al组分与摩尔比TMAl／（TMGa＋TMAl）关系为线性，说明在优化的生长条件下，Al原子与NH3的寄生反应得到了有效的抑制。
英文摘要：
Variational Al composition AlxGa1-xN （0.13 〈x 〈0.8） films on （0001） sapphire grown by metalorganic chemical vapor deposition was investigated. The AlN interlayers between AlGaN and GaN template are shown to effectively reduce biaxial tensile strain in AlGaN films ,thus avoiding cracks. The roughness of all AlGaN films is less than lnm probed by atomic force microscopy. Basing on the in-situ interference spectra,the growth rate of AlGaN is dominated by TMGa flux and decreasing with elevatory Al composition. The nominal Al content of AlxGa1-xN is determined by X-ray diffraction and Rutherford backscattering, which is linear with （TMAl/TMGa ＋ TMAl）. It proves that the parasitic reaction of TMAl and NH3 is suppressed under optimized growth conditions.
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