位置：成果数据库 > 期刊 > 期刊详情页
Negative bias temperature instability induced single event transient pulse narrowing and broadening
  • 期刊名称：Chinese Journal of Semiconductors
  • 时间：2010.11.11
  • 页码：1-5
  • 相关项目：吉赫兹锁相环单粒子瞬变效应建模与加固技术研究
作者： Chen Jianjun|Chen Shuming|et al|
同期刊论文项目
吉赫兹锁相环单粒子瞬变效应建模与加固技术研究
期刊论文 28 会议论文 19 专利 1
同项目期刊论文
The Modulation Effect of Substrate Doping on Multi-node Charge Collection and Single Event Transient
New insight on the parasitic bipolar amplification effect in single event transient production
Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFE
Impact of circuit placement on single event transient in 65nm bulk CMOS technology
Charge collection of single event effects at Bragg's peak
A Study of Cache Design in Stream Processor
Novel Layout Technique for Single-Event Transient Mitigation Using Dummy Transistor
RC端角的定制与应用
一种基于网格的芯片布局密度控制方法
The dual role of multiple-transistor charge sharing collection in single-event transients
用于无线互连的片上天线金属干扰分析与设计规则
NBTI效应导致SET脉冲在产生与传播过程中的展宽
65nm体硅CMOS工艺器件尺寸对其脉冲削减效应的影响
改善辐照加固设计流水线型模数转换器性能的抖动电路技术
Dynamic thermal management by greedy scheduling algorithm
基于Muller_C单元和DICE单元的抗辐照D触发器设计
Parasitic bipolar amplification in a single event transient and its temperature dependence
65nm体硅CMOS工艺器件尺寸对脉冲消减效应的影响
Effect of p-well contact on n-well potential modulation in a 90 nm bulk technology
Single event transient pulse attenuation effect in three-transistor inverter chain
Radiation hardened by design techniques to reduce single event transient pulse width based on the ph
Recovery of single event upset in advanced complementary metal-oxide semiconductor static random acc
3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET
The effect of P+ deep well doping on SET pulse propagation
基于敏感寄存器替换的电路软错误率与开销最优化