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中文摘要：
采用固源分子束外延（SSMBE）技术,在α-Al2O3（0001）衬底上直接制备出了SiC薄膜。利用反射式高能电子衍射（RHEED）、Raman光谱、X射线扫描、傅里叶变换红外光谱（FT-IR）、X射线衍射（XRD）等实验技术,对生长的样品的结构和结晶质量进行了表征。结果表明：在蓝宝石衬底上生长出了结晶性能良好的6H-SiC薄膜,且薄膜中存在较小的压应力,这种压应力是由薄膜与衬底之间热膨胀系数的差异所致。
英文摘要：
SiC thin films have been epitaxially grown on α-Al2O3（0001）substrates by solid-source molecular beam epitaxy（SSMBE）.The structure and crystalline quality of the films were characterized with reflection high energy electron diffraction（RHEED）,Raman spectrum,X-ray scan,Fourier transform infrared spectroscope（FT-IR） and X-ray diffraction（XRD）.These results demonstrate that the 6H-SiC films with good crystalline quality are epitaxially grown on the sapphire substrates,and the smaller compressive stress exists in the films because of the difference of the thermal expansion coefficient between the films and the substrates.
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In situ study on the electronic structure of graphene grown on 6H-SiC (0 0 0 over(1, -)) with synchr
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