中文摘要：

用化学沉淀法在ZnO颗粒表面修饰了In（OH）3层。粉末XRD和TEM测试的结果表明，In（OH）3颗粒的尺寸约为10-30nm。随着In（OH）3负载量的增加，ZnO的放电比容量、利用率和电荷转移电阻逐渐增大，而充放电电压逐渐降低。In（OH）3负载量为12．5％的ZnO与纯ZnO前150次循环的平均放电比容量分别为552mAh／g和286mAh／g；ZnO的平均利用率分别为84．2％和44．7％；电荷转移电阻分别为0．82Ω和0．24Ω；平均充放电电压降低24mV和40mV。

英文摘要：

In（OH）3 layer was modified on the surface of ZnO particle via chemical precipitation process. The results of powder XRD and TEM tests showed that the size of the In（OH）3 particle was about 10 - 30 nm. The specific discharge capacity,utilization ratio and charge transfer resistance of gnO increased with the increasing of In（ OH）3 loading,but the eharge-discharge voltage decreased. In the first 150 cycles, the average specific discharge capacities of ZnO with 12.5% In（ OH）3 loading and the pure ZnO were 552 mAh/g and 286 mAh/g, the utilization ratios of ZnO were 84.2 % and 44.7 %. The charge transfer resistance was 0.82 Ω and 0.24 Ω, respectively, the average charge-discharge voltages decreased 24 mV and 40 m V, respectively.