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Advantage of InGaN-based light-emitting diodes with trapezoidal electron blocking layer
  • ISSN号：1369-8001
  • 期刊名称：Materials Science in Semiconductor Processing
  • 时间：2013
  • 页码：-
  • 相关项目：大功率LED关键热物理问题的基础研究
作者： Wang T H|Xu J L|
同期刊论文项目
大功率LED关键热物理问题的基础研究
期刊论文 112 会议论文 47
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