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Endurance characteristics of phase change memory cells
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TP333[自动化与计算机技术—计算机系统结构;自动化与计算机技术—计算机科学与技术] TS195.58[轻工技术与工程—纺织化学与染整工程;轻工技术与工程—纺织科学与工程]
  • 作者机构：[1]Shanghai Institute of'Micro-System and lnlbrrnation Technology, Shanghai 200050, China, [2]Shanghai Tech University, Shanghai 200031, China
  • 相关基金：Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences （No. XDA09020402）, the National Key Basic Research Program of China （Nos. 2013CBA01900, 2010CB934300, 2011CBA00607, 201 ICB932804）, the National Integrate Circuit Research Program of China （No. 2009ZX02023-003）, the National Natural Science Foundation of China （No. 61176122, 61106001, 61261160500, 61376006）, and the Science and Technology Council of Shanghai （Nos. 12nm0503701, 13DZ2295700, 12QA1403900, 13ZR1447200, 14ZR1447500）.
作者： 霍如如, 蔡道林, 陈邦明, 陈一峰, 王玉婵, 王月青, 魏宏阳, 王青, 夏洋洋, 高丹, 宋志棠
关键词： 相变存储器, 特性, 耐久, 单元, 操作周期, 复位状态, 操作条件, 成分变化, phase change memory, endurance, compositional change, threshold voltage
中文摘要：

The endurance characteristics of phase change memory are studied. With operational cycles, the resistances of reset and set states gradually change to the opposite direction. What is more, the operational conditions that are needed are also discussed. The failure and the changes are concerned with the compositional change of the phase change material. An abnormal phenomenon that the threshold voltage decreases slightly at first and then increases is observed, which is due to the coaction of interface contact and growing active volume size changing.

英文摘要：

The endurance characteristics of phase change memory are studied. With operational cycles, the resis- tances of reset and set states gradually change to the opposite direction. What is more, the operational conditions that are needed are also discussed. The thilure and the changes are concerned with the compositional change of the phase change material. An abnormal phenomenon that the threshold voltage decreases slightly at first and then increases is observed, which is due to the coaction of interthce contact and growing active volume size changing.

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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754