位置：成果数据库 > 期刊 > 期刊详情页
Hall resistivity of Fe doped Si film at low temperatures
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：1-3
  • 语言：英文
  • 相关项目：在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
作者： Cui, J.|Su, W. F.|Xu, Y. Q.|Jiang, Z. M.|Shao, Y. M.|Nie, T. X.|
同期刊论文项目
在硅衬底上Er2O3、Tm2O3高k介质材料的外延生长和物理特性研究
期刊论文 9 会议论文 9
同项目期刊论文
temperature effects on the growth and electrical properties of Er2O3 films on Ge substrates
Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer
Transport properties of a Fe(0.04)Si(0.96) film at low temperatures
Amorphous SiO(x) nanowires catalyzed by metallic Ge for optoelectronic applications
Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular b
Single crystalline Tm(2)O(3) films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epit
Group-IV-diluted magnetic semiconductor Fe(x)Si(1-x) thin films grown by molecular beam epitaxy
Hole transport in one-dimensional aligned GeSi quantum dots at low temperatures