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中文摘要：
设计并优化了一种用808nm的大功率激光二极管为抽运光源，In0.09Ga0.91As量子阱结构为增益介质的920nm光抽运半导体垂直外腔面发射激光器。运用有限元方法，对激光器的电特性方程和光特性方程求自洽解，计算了器件各种特性参量。分析了单个周期内不同阱的个数（1，2和3）、不同阱深、不同垒宽、不同非吸收层组分、不同非吸收层尺寸条件下，器件性能的改变，特别是模式、阈值和光一光转换效率的改变，从而选择一个最佳的结构。
英文摘要：
A vertical-external-cavity surface-emitting 920 nm semiconductor laser （OP-VECSEL） with active region of In0 09Gao 91 As quantum well （QW） system pumped by 808 nm laser diode module was constructed and optimized. By the finite element method, self-consistent solutions of electronic and optical equations of the semiconductor laser were realized and the characteristic parameters of OP-VECSEL were calculated. The performances of the especial mode in device, the threshold and the optical-optical conversion efficiency were analyzed by dealing with different structure parameters,including number of QWs （ 1,2 and 3） in one period, QW depth, width and component of bar- rier and dimension of the non-absorption layer. The best structure of the laser was chosen.
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High power and good beam quality of two-dimensional VCSEL array with integrated GaAs microlens array
Light-current characteristics of vertical-cavity surface-emitting lasers with external optical feedb
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