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中文摘要：
为了在一个单个纵的模式与稳定的操作获得高力量的半导体激光并且改进产量的特征，微笑，一个射出结束的表面秒顺序金属栅栏散布了反馈(DFB ) 激光在约 940 nm 射出被制作。有或没有栅栏的 uncoated 设备的特征在房间温度下面被测试没有任何温度控制设备的连续波浪的条件并且比较。有栅栏的设备完成多达 385 mW/facet 和 2.7 的一个小侧面的远地的角度的高力量吗？？
英文摘要：
To obtain high-power semiconductor lasers with stable operation in a single longitudinal mode and improve the characteristics of the output beam, an end-emitting surface second-order metal grating distributed feedback （DFB） laser emitting at around 940 nm is fabricated. The characteristics of the uncoated devices with and without gratings are tested under room temperature continu- ous-wave conditions without any temperature-control device and compared. The devices with gratings achieve high powers of up to 385 roW/facet and a small lateral far-field angle of 2.7~ at 1.5 A, have only 4.13 nm/A wavelength-shift, and 0.09 nm spectral linewidth at 600 mA, and operate in a stable longitudinal mode. Devices without gratings operate in multimode, with a larger lateral far-field angle （7.3°） and spectral linewidth （1.3 nm）, although with higher output powers. Because of the integration of second-order metal gratings and their very high coupling capability, the output beam quality is improved greatly, the lasing wavelength is stable and varies slowly with changes in injection current, angles are greatly reduced. This opens the way for the realization order metal grating end and surface-emitting DFB lasers and arrays beam quality. while the spectrum is narrowed dramatically, and the far-field of watt-scale power broad-stripe （〉100 μm） surface second- with single frequency, single mode operation and high output
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