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Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage
  • ISSN号：2158-3226
  • 期刊名称：AIP Advances
  • 时间：2012.3.3
  • 页码：012112-012116
  • 相关项目：La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3多铁隧道结四阻态存储特性及电磁调控的研究
作者： Tian, Ye|Guo, Chuan Fei|Guo, Shengming|Wang, Yongsheng|Miao, Junjie|Wang, Qi|Liu, Qian|
同期刊论文项目
La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3多铁隧道结四阻态存储特性及电磁调控的研究
期刊论文 13
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