纳米结构氧化锡是一种具有较高比表面积、催化活性、光电性能等优异特性的半导体材料.氧化锡纳米线作为纳米结构氧化锡的一种,其典型制备方法包括模板法、液相法、气相法和热氧化法等.综述了氧化锡纳米线典型制备方法的基本原理和工艺特点及其优缺点,并且提出了目前氧化锡纳米线制备工艺中存在的问题.
Nanostructure tin oxide is a kind of semiconductor material with excellent properties of specific surface ar-ea, catalytic activity, and higher photoelectric performance. Tin oxide nanowires as one of nanostructure tin oxide, its typical preparation methods include template method, liquid phase method, gas phase method and thermal oxidation method eta1. In this paper, the basic principle, preparation process and characteristics of various typical preparation methods of tin oxide nanowires are reviewed. And the existing problems for the preparation process of tin oxide nanowires were also suggested.