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Structural modifications of AlInN/GaN thin films by neon ion implantation
  • ISSN号：0375-9601
  • 期刊名称：Physics Letters A
  • 时间：2013.12.2
  • 页码：2986-2989
  • 相关项目：富In条件下生长模式对AlInN晶体质量与光电性质的影响
作者： Muhammad Usman|Abdul Shakoor|Najmul Hassan|J.J. Zhu|
同期刊论文项目
富In条件下生长模式对AlInN晶体质量与光电性质的影响
期刊论文 38 会议论文 2
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